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tde1897r TDE1898R 0.5a high-side driver industrial intelligent power switch preliminary data 0.5a output current 18v to 35v supply voltage range internal current limiting thermal shutdown open ground protection internal negative voltage clamping to v s - 45v for fast demagnetization differential inputs with large com- mon mode range and threshold hysteresis undervoltage lockout with hysteresis open load detection two diagnostic outputs output status led driver description the tde1897r/TDE1898R is a monolithic intelli- gent power switch in multipower bcd technol- ogy, for driving inductive or resistive loads. an in- ternal clamping diode enables the fast demag- netization of inductive loads. diagnostic for cpu feedback and extensive use of electrical protections make this device inher- ently indistructible and suitable for general pur- pose industrial applications. this is advanced information on a new product now in development or undergoing evaluation. details are subject to change without notice. october 1995 minidip sip9 so20 ordering numbers: tde1897rdp TDE1898Rsp tde1897rfp TDE1898Rdp TDE1898Rfp block diagram multipower bcd technology 1/12
pin connections (top view) absolute maximum ratings (minidip pin reference) symbol parameter value unit v s supply voltage (pins 3 - 1) (t w < 10ms) 50 v v s v o supply to output differential voltage. see also v cl 3-2 (pins 3 - 2) internally limited v v i input voltage (pins 7/8) -10 to v s +10 v v i differential input voltage (pins 7 - 8) 43 v i i input current (pins 7/8) 20 ma i o output current (pins 2 - 1). see also isc internally limited a e l energy from inductive load (t j =85 c) 200 mj p tot power dissipation. see also thermal characteristics. internally limited w t op operating temperature range (t amb ) -25 to +85 c t stg storage temperature -55 to 150 c thermal data symbol description minidip sip so20 unit r th j-case thermal resistance junction-case max. 10 c/w r th j-amb thermal resistance junction-ambient max. 100 70 90 c/w minidip sip9 so20 tde1897r - TDE1898R 2/12
electrical characteristics (v s = 24v; t amb = 25 to +85 c, unless otherwise specified) symbol parameter test condition min. typ. max. unit v smin 3 supply voltage for valid diagnostics i diag > 0.5ma @ v dg1 = 1.5v 9 35 v v s 3 supply voltage (operative) 18 24 35 v i q 3 quiescent current i out =i os =0 v il v ih 2.5 4.5 4 7.5 ma ma v sth1 undervoltage threshold 1 (see fig. 1); t amb = 0 to +85 c11 v v sth2 3 undervoltage threshold 2 (see fig. 1); tamb = 0 to +85 c 15.5 v v shys supply voltage hysteresis (see fig. 1); t amb = 0 to +85 c 0.4 1 3 v i sc short circuit current v s = 18 to 35v; r l =1 w 0.75 1.5 a v don 3-2 output voltage drop @ i out = 625ma; t j =25 c @i out = 625ma; t j = 125 c 250 400 425 600 mv mv i oslk 2 output leakage current @ v i =v il ,v o = 0v 300 m a v ol 2 low state out voltage @ v i =v il ;r l = 0.8 1.5 v v cl 3-2 internal voltage clamp (v s -v o )@i o = -500ma 45 55 v i old 2 open load detection current v i =v ih ;t amb = 0 to +85 c 0.5 9.5 ma v id 7-8 common mode input voltage range (operative) v s = 18 to 35v, v s -v id 7-8 < 37v 7 15 v i ib 7-8 input bias current v i = 7 to 15v; in = 0v 700 700 m a v ith 7-8 input threshold voltage v+in > vin 0.8 1.4 2 v v iths 7-8 input threshold hysteresis voltage v+in > vin 50 400 mv r id 7-8 diff. input resistance @ 0 < +in < +16v; in = 0v @ 7 < +in < 0v; in = 0v 400 150 k w k w i ilk 7-8 input offset current v+in = vin +ii 0v < v i <5.5v ii 20 75 25 +20 m a m a in = gnd +ii 0v < v+in <5.5v ii 250 +10 125 +50 m a m a +in = gnd +ii 0v < vin <5.5v ii 100 50 30 15 m a m a v oth1 2 output status threshold 1 voltage (see fig. 1) 12 v v oth2 2 output status threshold 2 voltage (see fig. 1) 9 v v ohys 2 output status threshold hysteresis (see fig. 1) 0.3 0.7 2 v i osd 4 output status source current v out >v oth1 ,v os = 2.5v 2 4 ma v osd 3-4 active output status driver drop voltage v s v os @i os = 2ma; t amb = -25 to 85 c 5v i oslk 4 output status driver leakage current v out 2v @ (v+in > vin); minidip pin reference. all test not dissipative. tde1897r - TDE1898R 3/12
figure 1 diagnostic truth table diagnostic conditions input output diag1 diag2 normal operation l h l h h h h h open load condition (i o TDE1898R h 2v @ (v+in > vin); minidip pin reference. (*) not tested. tde1897r - TDE1898R 4/12
application information demagnetization of inductive loads an internal zener diode, limiting the voltage across the power mos to between 45 and 55v (v cl ), provides safe and fast demagnetization of inductive loads without external clamping devices. the maximum energy that can be absorbed from an inductive load is specified as 200mj (at t j =85 c). to define the maximum switching frequency three points have to be considered: 1) the total power dissipation is the sum of the on state power and of the demagnetization energy multiplied by the frequency. 2) the total energy w dissipated in the device during a demagnetization cycle (figg. 2, 3) is: w = v cl l r l ? ? i o v cl v s r l log ? ? ? 1 + v s v cl v s ? ? ? ? ? where: v cl = clamp voltage; l = inductive load; r l = resistive load; vs = supply voltage; i o =i load 3) in normal conditions the operating junction temperature should remain below 125 c. figure 2: inductive load equivalent circuit figure 3: demagnetization cycle waveforms -25 0 25 50 75 100 125 tj ( c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 a d93in018 a = rdson (tj) rdson (tj=25 c) figure 4: normalized r dson vs. junction temperature tde1897r - TDE1898R 5/12
worst condition power dissipation in the on-state in ips applications the maximum average power dissipation occurs when the device stays for a long time in the on state. in such a situation the internal temperature depends on delivered cur- rent (and related power), thermal characteristics of the package and ambient temperature. at ambient temperature close to upper limit (+85 c) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown proce- dure untimely intervene. our aim is to find the maximum current the ips can withstand in the on state without thermal shutdown intervention, related to ambient tem- perature. to this end, we should consider the fol- lowing points: 1) the on resistance r dson of the output ndmos (the real switch) of the device in- creases with its temperature. experimental results show that silicon resistiv- ity increases with temperature at a constant rate, rising of 60% from 25 c to 125 c. the relationship between r dson and tem- perature is therefore: r dson = r dson0 ( 1 + k ) ( t j 25 ) where: t j is the silicon temperature in c r dson0 is r dson at t j =25 c k is the constant rate (k = 4.711 ? 10 3 ) (see fig. 4). 2) in the on state the power dissipated in the device is due to three contributes: a) power lost in the switch: p out = i out 2 ? r dson (i out is the output cur- rent); b) power due to quiescent current in the on state iq, sunk by the device in addition to i out :p q = i q ? v s (v s is the supply voltage); c) an external led could be used to visualize the switch state (output status pin). such a led is driven by an internal current source (delivering i os ) and therefore, if v os is the voltage drop across the led, the dissi- pated power is: p os = i os ? ( v s v os ) . thus the total on state power consumption is given by: p on = p out + p q + p os (1) in the right side of equation 1, the second and the third element are constant, while the first one increases with temperature because r dson increases as well. 3) the chip temperature must not exceed q lim in order do not lose the control of the device. the heat dissipation path is represented by the thermal resistance of the system device- board-ambient (r th ). in steady state condi- tions, this parameter relates the power dissi- pated p on to the silicon temperature t j and the ambient temperature t amb : t j t amb = p on ? r th (2) from this relationship, the maximum power p on which can be dissipated without exceeding q lim at a given ambient temperature t amb is: p on = q lim t amb r th replacing the expression (1) in this equation and solving for i out , we can find the maximum current versus ambient temperature relation- ship: i outx = ``````` q lim t amb r th p q p os r dsonx where r dson xisr dson at t j = q lim. of course, i outx values are top limited by the maximum operative current i outx (500ma nominal). from the expression (2) we can also find the maximum ambient temperature t amb at which a given power p on can be dissipated: t amb =q lim p on ? rth = =q lim ( i out 2 ? r dsonx + p q + p os ) ? r th in particular, this relation is useful to find the maximum ambient temperature t ambx at which i outx can be delivered: t ambx =q lim ( i outx 2 ? r dsonx + + p q + p os ) ? r th (4) referring to application circuit in fig. 5, let us con- sider the worst case: - the supply voltage is at maximum value of in- dustrial bus (30v instead of the 24v nominal value). this means also that i outx rises of 25% tde1897r - TDE1898R 6/12
(625ma instead of 500ma). - all electrical parameters of the device, con- cerning the calculation, are at maximum val- ues. - thermal shutdown threshold is at minimum value. - no heat sink nor air circulation (r th equal to r thj-amb ). therefore: v s = 30v, r dson0 = 0.6 w ,i q = 6ma, i os = 4ma @ v os = 2.5v, q lim = 135 c r thj-amb = 100 c/w (minidip); 90 c/w (so20); 70 c/w (sip9) it follows: i outx = 0.625ma, r dsonx = 1.006 w ,p q = 180mw, p os = 110mw from equation 4, we can find: t ambx = 66.7 c (minidip); 73.5 c (so20); 87.2 c (sip9). therefore, the ips tde1897/1898, although guaranteed to operate up to 85 c ambient tem- perature, if used in the worst conditions, can meet some limitations. sip9 package, which has the lowest r thj-amb , can work at maximum operative current over the en- tire ambient temperature range in the worst condi- tions too. for other packages, it is necessary to consider some reductions. with the aid of equation 3, we can draw a derat- ing curve giving the maximum current allowable versus ambient temperature. the diagrams, com- puted using parameter values above given, are depicted in figg. 6 to 8. if an increase of the operating area is needed, heat dissipation must be improved (r th reduced) e.g. by means of air cooling. + - +in -in d1 d2 control logic ios load output output status gnd m p polling +vs dc bus 24v +/-25% d93in014 figure 5: application circuit. tde1897r - TDE1898R 7/12
0 20 40 60 80 100 ( c) 0 100 200 300 400 500 600 (ma) d93in015 figure 6: max. output current vs. ambient temperature (minidip package, r th j-amb = 100 c/w) 0 20406080100( c) 0 100 200 300 400 500 600 (ma) d93in016 figure 7: max. output current vs. ambient temperature (so20 package, r th j-amb =90 c/w) 0 20 40 60 80 100 ( c) 0 100 200 300 400 500 600 (ma) d93in017 figure 8: max. output current vs. ambient temperature (sip9 package, r th j-amb =70 c/w) tde1897r - TDE1898R 8/12
minidip package mechanical data dim mm inch min. typ. max. min. typ. max. a 3.32 0.131 a1 0.51 0.020 b 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 d 10.92 0.430 e 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 f 6.6 0260 i 5.08 0.200 l 3.18 3.81 0.125 0.150 z 1.52 0.060 tde1897r - TDE1898R 9/12
d n m l1 19 d1 l3 l2 la1 e3 b3 b1 b ec1 a c2 c p l4 sip9 b3 sip9 package mechanical data dim. mm inch min. typ. max. min. typ. max. a 7.1 0.280 a1 2.7 3 0.106 0.118 b 23 0.90 b3 24.8 0.976 b1 0.5 0.020 b3 0.85 1.6 0.033 0.063 c 3.3 0.130 c1 0.43 0.017 c2 1.32 0.052 d 21.2 0.835 d1 14.5 0.571 e 2.54 0.100 e3 20.32 0.800 l 3.1 0.122 l1 3 0.118 l2 17.6 0.693 l3 0.25 0.010 l4 17.4 17.85 0.685 0,702 m 3.2 0.126 n 1 0.039 p 0.15 0.006 tde1897r - TDE1898R 10/12
so20 package mechanical data dim. mm inch min. typ. max. min. typ. max. a 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.013 c 0.5 0.020 c1 45 (typ.) d 12.6 13.0 0.496 0.510 e 10 10.65 0.394 0.419 e 1.27 0.050 e3 11.43 0.450 f 7.4 7.6 0.291 0.300 l 0.5 1.27 0.020 0.050 m 0.75 0.030 s8 (max.) tde1897r - TDE1898R 11/12
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs- thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics printed in italy all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. tde1897r - TDE1898R 12/12

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